IPP048N12N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPP048N12N3 G
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 300 W 120 V Continuous Drain Current (ID):100 A 137 nC
| Parameter | Value |
|---|---|
| Gate Charge | 137 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 100 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.8 mΩ |
| Input capacitance | 12 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 300 W |
| Drain to Source Breakdown Voltage (Vds) | 120 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2
Distributors
pcbx
pcbxUnit Price$3.41069
Ext.Price$3.41069
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.41069 | $3.41069 |
| 10 | $2.91946 | $29.19460 |
| 25 | $2.76878 | $69.21950 |
| 50 | $2.62589 | $131.29450 |
| 100 | $2.35516 | $235.51600 |
| 300 | $2.28481 | $685.44300 |
| 500 | $2.21655 | $1108.27500 |
| 1000 | $2.15389 | $2153.89000 |